| PART |
Description |
Maker |
| CRF24060 |
60 W, SiC RF Power MESFET
|
CREE[Cree, Inc]
|
| S6306 |
SiC Schottky Barrier Diode Bare Die
|
Rohm Co., Ltd.
|
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6203 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| SCH2080KE |
N-channel SiC power MOSFET co-packaged with SiC-SBD
|
Rohm
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| APT2X51DC60J APT2X50DC60J |
ISOTOP垄莽 SiC Diode Power Module
ISOTOP? SiC Diode Power Module
|
Microsemi Corporation
|
| APT2X21DC60J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
| NE960R27501 NE960R275 |
0.2W X, Ku-BAND POWER GaAs MESFET
|
NEC[NEC]
|
